SW100N10B mosfet equivalent, mosfet.
TO-220
* High ruggedness
* RDS(ON) (Max 10.5m Ω)@VGS=10V
* Gate Charge (Typ 106nC)
* Improved dv/dt Capability
* 100% Avalanche Tested
12 3
1. Gat.
This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteris.
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