SW100N10A mosfet equivalent, mosfet.
TO-220
* High ruggedness
* RDS(ON) (Max 7.4m Ω)@VGS=10V
* Gate Charge (Typ 127nC)
* Improved dv/dt Capability
* 100% Avalanche Tested
12 3
1. Gate.
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast
switching time, low on resistance, low gate charge and especially excellent avalanche
charact.
Image gallery
TAGS
Download