4N60B mosfet equivalent, n-channel i-pak/d-pak/to-220f mosfet.
* High ruggedness
* RDS(ON) (Max 2.5 Ω)@VGS=10V
* Gate Charge (Typ 11nC)
* Improved dv/dt Capability
* 100% Avalanche Tested
: 4A
RDS(ON) : 2.5Ω
2 1.
This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteris.
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