4N60B N-channel I-PAK/D-PAK/TO-220F MOSFET
■ High ruggedness ■ RDS(ON) (Max 2.5 Ω)@VGS=10V ■ Gate Charge (Typ 11nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested : 4A RDS(ON) : 2.5Ω 2 1.
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