RU30J30M mosfet equivalent, dual n-channel advanced power mosfet.
* 30V/30A, RDS (ON) =7mΩ(Typ.)@VGS=10V RDS (ON) =9.5mΩ(Typ.)@VGS=4.5V
* Fast Switching Speed
* Low gate Charge
* 100% avalanche tested
* Lead Free and.
* Switching Application Systems
* DC/DC Converters
Pin Description
G2S2 S2 S2
G1D1D1D1 PDFN5*6
PIN1
Absolute.
G2S2 S2 S2
G1D1D1D1 PDFN5*6
PIN1
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS VGSS
TJ TSTG
IS
Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Di.
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