RU3010H Datasheet N-Channel Advanced Power MOSFET

Manufacturer: Ruichips

RU3010H n-channel advanced power mosfet by Ruichips - Datasheet Preview

Datasheet Details

Part number	RU3010H
Manufacturer	Ruichips
File Size	278.07 KB
Description	N-Channel Advanced Power MOSFET
Download	RU3010H Download (PDF)

General Description

SOP-8 Applications • SMPS Absolute Maximum Ratings N-Channel MOSFET Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TA=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested TA=25°C ID PD ② RθJA Continuous Drain Current(VGS=10V) TA=25°C TA=70°C Maximum Power Dissipation TA=25°C TA=70°C Thermal Resistance-Junction to Ambient Rating 30 ±20 150 -55 to 150 4 ① 32 8 6 3.1 2 40 Unit V °C °C A A A W °C/W Copyright© Ruichips Semiconductor Co., Ltd Rev.

A– JUN., 2011 www.ruichips.com RU3010H Electrical Characteristics (TA=25

Overview

RU3010H N-Channel Advanced Power MOSFET MOSFET.

Key Features

30V/8A, RDS (ON) =18mΩ (Typ. ) @ VGS=10V RDS (ON) =40mΩ (Typ. ) @ VGS=4.5V.
Super High Dense Cell Design.
Reliable and Rugged.
Lead Free and Green Available Pin.

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