RU3010H N-Channel Advanced Power MOSFET
• 30V/8A, RDS (ON) =18mΩ (Typ.) @ VGS=10V RDS (ON) =40mΩ (Typ.) @ VGS=4.5V
• Super High Dense Cell Design
• Reliable and Rugged
• Lead Free and Green Avai.
• SMPS
Absolute Maximum Ratings
N-Channel MOSFET
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Note.
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