RU3091M mosfet equivalent, n-channel advanced power mosfet.
* 30V/90A, RDS (ON) =2.8mΩ(Typ.)@VGS=10V RDS (ON) =3.4mΩ(Typ.)@VGS=4.5V
* Super High Dense Cell Design
* Ultra Low On-Resistance
* Fast Switching Speed
* DC/DC Converters
* Load switch
* Synchronous rectification
Pin Description
DDDD
SSS G PIN1
PDFN5060
D
P.
DDDD
SSS G PIN1
PDFN5060
D
PIN1
G
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS VGSS
TJ TSTG
IS
Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range .
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