RU1H60R mosfet equivalent, n-channel advanced power mosfet.
* 100V/60A, RDS (ON) =17 mΩ(Typ.)@VGS=10V RDS (ON) =18.5 mΩ(Typ.)@VGS=4.5V
* Super High Dense Cell Design
* Ultra Low On-Resistance
* 100% avalanche teste.
* Switching Applications
Pin Description
TO-220
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Com.
TO-220
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode .
Image gallery
TAGS
Download (Size : 333.61KB)