1) Low forward voltage 2) Low switching loss 3) High current overload capacity lConstruction Silicon epitaxial planar type lDimensions (Unit : mm) f3.1±0.1 10.2±0.2 4.5.

indicated in this document. 7) The Products specified in this document are not designed to be radiation tolerant. 8) For.

RFN20T2D

RFN20T2DNZ

RFN20TF6S

RFN20NS3S

RFN20NS3SFH

RFN20NS6S

RFN2L4S

RFN2L6S

RFN2L6SDD

RFN2LAM4S

RFN2LAM4STF

RFN2LAM6STF

RFN10BM3S

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