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RFN20T2D - Super Fast Recovery Diode

Features

  • )Cathode common Dual type. (TO-220) 2)Low VF 3)Low switching loss 10.0±0.3 　　　 0.1 4.5±0.3 　　　 0.1 2.8±0.2 　　　 0.1 15.0±0.4 　 0.2 8.0.
  • Construction Silicon epitaxial planer RFN20 T2D ① 1.2 1.3 0.8 (1) (2) (3) 0.7±0.1 0.05 ROHM : TO220FN ① dot (year week factory) 2.6±0.5.
  • Structure 5.0±0.2NotNeRewcDoemsimgennsd 14.0±0.5 13.5MIN.
  • Absolute maximum ratings (Tc=25C) Parameter Symbol Repetitive peak reverse voltage Reverse voltage VRM VR Average rectified forward current.

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Datasheet Details

Part number RFN20T2D
Manufacturer ROHM
File Size 526.40 KB
Description Super Fast Recovery Diode
Datasheet download datasheet RFN20T2D Datasheet

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Full PDF Text Transcription

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Data Sheet 8.0±0.2ed for 12.0±0.2 Super Fast Recovery Diode RFN20T2D Applications General rectification Dimensions (Unit : mm) Features 1)Cathode common Dual type. (TO-220) 2)Low VF 3)Low switching loss 10.0±0.3 　　　 0.1 4.5±0.3 　　　 0.1 2.8±0.2 　　　 0.1 15.0±0.4 　 0.2 8.0 Construction Silicon epitaxial planer RFN20 T2D ① 1.2 1.3 0.8 (1) (2) (3) 0.7±0.1 0.05 ROHM : TO220FN ① dot (year week factory) 2.6±0.5 Structure 5.0±0.2NotNeRewcDoemsimgennsd 14.0±0.5 13.5MIN Absolute maximum ratings (Tc=25C) Parameter Symbol Repetitive peak reverse voltage Reverse voltage VRM VR Average rectified forward current Io Forward current surge peak Junction temperature Storage temperature IFSM Tj Tstg Conditions Duty≤0.
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