Transistors
UMT2222A / SST2222A / MMST2222A / PN2222A
NPN Medium Power Transistor (Switching)
UMT2222A / SST2222A / MMST2222A / PN2222A
!Features
1) BVCEO > 40V (IC=10mA)
2) Complements the UMT2907A / SST2907A
/ MMST2907A / PN2907A.
!Package, marking, and packaging specifications
Part No.
Packaging type
Marking
Code
Basic ordering unit
(pieces)
UMT2222A
UMT3
R1P
T106
SST2222A MMST2222A
SST3
SMT3
R1P
R1P
T116
T146
PN2222A
TO-92
−
T93
3000
3000
3000
3000
!Absolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Collector-base voltage
VCBO
Collector-emitter voltage
VCEO
Emitter-base voltage
VEBO
Collector current
IC
Collector power
dissipation
UMT2222A,SST2222A,
MMST2222A
SST2222A
PN2222A
PC
Junction temperature
Tj
Storage temperature
Tstg
∗ When mounted on a 7 x 5 x 0.6 mm ceramic board
Limits
75
40
6
0.6
0.2
0.35
0.625
150
−55 ∼ +150
Unit
V
V
V
A
W
W∗
W
°C
°C
!External dimensions (Units : mm)
UMT2222A
ROHM : UMT3
EIAJ : SC-70
SST2222A
ROHM : SST3
MMST2222A
2.0±0.2
1.3±0.1
0.65 0.65
(1) (2)
0.9±0.1
0.2 0.7±0.1
0 ∼ 0.1
(3)
0.3−+00.1
0.15±0.05
All terminals have same dimensions
2.9±0.2
1.9±0.2
0.95 0.95
0.95 +−00..21
0.45±0.1
(1) (2)
(3)
0 ∼ 0.1
0.2Min.
0.4−+00..105
0.15−+00..016
All terminals have same dimensions
2.9±0.2
1.9±0.2
0.95 0.95
1.1+−00..21
0.8±0.1
(1) (2)
0 ∼ 0.1
ROHM : SMT3
EIAJ : SC-59
PN2222A
(3)
0.4−+00..105
0.15−+00..016
All terminals have same dimensions
4.8±0.2
3.7±0.2
(1) Emitter
(2) Base
(3) Collector
(1) Emitter
(2) Base
(3) Collector
(1) Emitter
(2) Base
(3) Collector
ROHM : TO-92
EIAJ : SC-43
0.5±0.1
(1)
(2)
(3)
2.5
+0.3
−0.1
5
0.45−+00..0155
2.3
(1) Emitter
(2) Base
(3) Collector
!Electrical characteristics (Ta = 25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Emitter input capacitance
Delay time
Rise time
Storage time
Fall time
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
VBE(sat)
hFE
fT
Cob
Cib
td
tr
tstg
tf
Min.
75
40
6
−
−
−
−
0.6
−
35
50
75
50
100
40
300
−
−
−
−
−
−
Typ.
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Max.
−
−
−
100
100
0.3
1
1.2
2
−
−
−
−
300
−
−
8
25
10
25
225
60
Unit
V
V
V
nA
nA
V
V
−
MHz
pF
pF
ns
ns
ns
ns
Conditions
IC =10µA
IC =10mA
IE =10µA
VCB = 60V
VEB = 3V
IC/IB =150mA/15mA
IC/IB =500mA/50mA
IC/IB =150mA/15mA
IC/IB =500mA/50mA
VCE =10V , IC =0.1mA
VCE =10V , IC =1mA
VCE =10V , IC =10mA
VCE =1V , IC =150mA
VCE =10V , IC =150mA
VCE =10V , IC =500mA
VCE =20V , IC =−20mA, f =100MHz
VCB =10V , f =100kHz
VEB =0.5V , f =100kHz
VCC =30V , VBE(OFF) =0.5V , IC =150mA , IB1 =15mA
VCC =30V , VBE(OFF) =0.5V , IC =150mA , IB1 =15mA
VCC =30V , IC =150mA , IB1 =−IB2 =15mA
VCC =30V , IC =150mA , IB1 =−IB2 =15mA
