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Fairchild Semiconductor Electronic Components Datasheet

PN2222 Datasheet

General Purpose Transistor

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PN2222
General Purpose Transistor
NPN Epitaxial Silicon Transistor
1 TO-92
1. Emitter 2. Base 3. Collector
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
Collector-Base Breakdown Voltage
Collector Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
VCE (sat) * Collector-Emitter Saturation Voltage
VBE (sat) * Base-Emitter Saturation Voltage
fT Current Gain Bandwidth Product
Cob Output Capacitance
* Pulse Test: Pulse Width300µs, Duty Cycle2%
IC=10µA, IE=0
IC=10mA, IB=0
IE=10µA, IC=0
VCB=50V, IE=0
VEB=3V, IC=0
VCE=10V, IC=0.1mA
VCE=10V, *IC=150mA
IC=500mA, IB=50mA
IC=500mA, IB=50mA
VCE=20V, IC=20mA, f=100MHz
VCB=10V, IE=0, f=1MHz
Value
60
30
5
600
625
150
-55 ~ 150
Units
V
V
V
mA
mW
°C
°C
Min.
60
30
5
35
100
300
Max.
0.01
10
300
1
2
8
Units
V
V
V
µA
nA
V
V
MHz
pF
©2004 Fairchild Semiconductor Corporation
Rev. A, November 2004


Fairchild Semiconductor Electronic Components Datasheet

PN2222 Datasheet

General Purpose Transistor

No Preview Available !

Package Dimensions
TO-92
4.58
+0.25
–0.15
0.46 ±0.10
1.27TYP
[1.27 ±0.20]
1.27TYP
[1.27 ±0.20]
3.60 ±0.20
(R2.29)
0.38
+0.10
–0.05
©2002 Fairchild Semiconductor Corporation
Dimensions in Millimeters
Rev. A, November 2004


Part Number PN2222
Description General Purpose Transistor
Maker Fairchild Semiconductor
Total Page 3 Pages
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