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Rohm Semiconductor Electronic Components Datasheet

IMH6A Datasheet

Dual Digital Transistor

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EMH6 / UMH6N / IMH6A
General purpose (dual digital transistors)
Datasheet
Parameter
VCC
IC(MAX.)
R1
R2
DTr1 and DTr2
50V
100mA
47kΩ
47kΩ
lFeatures
1)Two DTC144E chips in a EMT or UMT or
  SMT package.
2)Mounting possible with EMT3 or UMT3 or
  SMT3 automatic mounting machines.
3)Transistor elements are independent,
  eliminating interference.
4)Mounting cost and area can be cut in half.
lOutline
SOT-563
SOT-363
  
EMH6
(EMT6)
UMH6N
(UMT6)
SOT-457
           
 
 
  
IMH6A
(SMT6)
 
 
              
lInner circuit
EMH6 / UMH6N
IMH6A
lApplication
INVERTER, INTERFACE, DRIVER
lPackaging specifications
Part No.
Package
Package
size
   
Taping
code
Reel size Tape width
(mm) (mm)
Basic
ordering
unit.(pcs)
   
Marking
EMH6
SOT-563 1616 T2R 180
(EMT6)
8
8000
H6
UMH6N
SOT-363 2021
TR
180
8
(UMT6)
3000
H6
IMH6A
SOT-457
(SMT6)
2928
T108
180
8
3000
H6
                                                                                        
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/7
20151001 - Rev.002


Rohm Semiconductor Electronic Components Datasheet

IMH6A Datasheet

Dual Digital Transistor

No Preview Available !

EMH6 / UMH6N / IMH6A
lAbsolute maximum ratings (Ta = 25°C)
<For DTr1 and DTr2 in common>
Parameter
Supply voltage
Input voltage
Output current
Collector current
EMH6
Power dissipation
UMH6N
IMH6A
Junction temperature
Range of storage temperature
Datasheet
Symbol
VCC
VIN
IO
IC(MAX)*1
PD*2*3
PD*2*3
PD*2*4
Tj
Tstg
Values
50
-10 to 40
30
100
150
150
300
150
-55 to +150
Unit
V
V
mA
mA
mW
lElectrical characteristics (Ta = 25°C)
<For DTr1 and DTr2 in common>
Parameter
Symbol
Conditions
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
VI(off)
VI(on)
VO(on)
II
IO(off)
GI
R1
R2/R1
VCC = 5V, IO = 100μA
VO = 0.3V, IO = 2mA
IO = 10mA, II = 0.5mA
VI = 5V
VCC = 50V, VI = 0V
VO = 5V, IO = 5mA
-
-
Transition frequency
f
*1
T
VCE = 10V, IE = -5mA,
f = 100MHz
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference land
*3 120mW per element must not be exceeded.
*4 200mW per element must not be exceeded.
Values
Min. Typ. Max.
- - 0.5
3.0 -
-
- 100 300
- - 180
- - 500
68 -
-
32.9 47 61.1
0.8 1.0 1.2
Unit
V
mV
μA
nA
-
-
- 250 - MHz
                                            
 
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
2/7
                                         
20151001 - Rev.002


Part Number IMH6A
Description Dual Digital Transistor
Maker Rohm
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IMH6A Datasheet PDF






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