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Rohm Semiconductor Electronic Components Datasheet

IMH2A Datasheet

Dual Digital Transistor

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Transistors
EMH2 / UMH2N / IMH2A
General purpose (dual digital transistors)
EMH2 / UMH2N / IMH2A
!Features
1) Two DTC144Es chips in a EMT or UMT or SMT
package.
2) Mounting possible with EMT3 or UMT3 or SMT3
automatic mounting machines.
3) Transistor elements are independent, eliminating
interference.
4) Mounting cost and area can be cut in half.
!Structure
Epitaxial planar type
NPN silicon transistor
(Built-in resistor type)
The following characteristics apply to both DTr1 and DTr2.
!External dimensions (Units : mm)
EMH2
(4)
(5)
(6)
1.2
1.6
(3)
(2)
(1)
ROHM : EMT6
All terminals have same dimensions
Abbreviated symbol : H2
UMH2N
1.25
2.1
!Equivalent circuit
EMH2 / UMH2N
(3) (2) (1)
R1 R2
DTr2
DTr1
R2 R1
(4) (5) (6)
R1=47k
R2=47k
IMH2A
(4) (5) (6)
R1 R2
DTr2
DTr1
R2 R1
(3) (2) (1)
R1=47k
R2=47k
!Packaging specifications
Type
EMH2
UMH2N
IMH2A
Package
Code
Basic ordering
unit (pieces)
T2R
8000
Taping
TN
3000
T110
3000
ROHM : UMT6
EIAJ : SC-88
0.1Min.
All terminals have same dimensions
Abbreviated symbol : H2
IMH2A
1.6
2.8
ROHM : SMT6
EIAJ : SC-74
0.3to0.6
All terminals have same dimensions
Abbreviated symbol : H2


Rohm Semiconductor Electronic Components Datasheet

IMH2A Datasheet

Dual Digital Transistor

No Preview Available !

Transistors
!Absolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Limits
Supply voltage
VCC 50
Input voltage
VIN 40
10
Output current
IO
IC(Max.)
Power
dissipation
EMH2,UMH2N
IMH2A
Pd
Junction temperature
Tj
Storage temperature
Tstg
1 120mW per element must not be exceeded.
2 200mW per element must not be exceeded.
30
100
150 (TOTAL)
300 (TOTAL)
150
55~+150
Unit
V
V
mA
1
mW
2
°C
°C
EMH2 / UMH2N / IMH2A
!Electrical characteristics (Ta = 25°C)
Parameter
Input voltage
Output voltage
Input current
Output current
DC current gain
Transition frequency
Input resistance
Resistance ratio
Transition frequency of the device
Symbol
VI(off)
VI(on)
VO(on)
II
IO(off)
GI
fT
R1
R2/R1
Min.
3
68
32.9
0.8
Typ.
0.1
250
47
1
Max.
0.5
0.3
0.18
0.5
61.1
1.2
Unit
V
V
mA
µA
MHZ
k
Conditions
VCC=5V, IO=100µA
VO=0.3V, IO=2mA
IO/II=10mA/0.5mA
VI=5V
VCC=50V, VI=0V
VO=5V, IO=5mA
VCE=10mA, IE=5mA, f=100MHz
!Electrical characteristic curves
100
VO=0.3V
50
20
10
5
2
1
500m
Ta=40°C
25°C
100°C
200m
100m
100µ 200µ 500µ 1m 2m 5m 10m 20m 50m100m
OUTPUT CURRENT : IO (A)
Fig.1 Input voltage vs. output current
(ON characteristics)
10m
VCC=5V
5m
2m Ta=100°C
25°C
1m 40°C
500µ
200µ
100µ
50µ
20µ
10µ
5µ
2µ
1µ
0 0.5 1.0 1.5 2.0 2.5
INPUT VOLTAGE : VI (off) (V)
3.0
Fig.2 Output current vs. input voltage
(OFF characteristics)
1k
500
Ta=100°C
200 25°C
40°C
100
50
VO=5V
20
10
5
2
1
100µ 200µ 500µ1m 2m 5m 10m 20m 50m100m
OUTPUT CURRENT : IO (A)
Fig.3 DC current gain vs. output
current


Part Number IMH2A
Description Dual Digital Transistor
Maker Rohm
PDF Download

IMH2A Datasheet PDF






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