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Rohm Semiconductor Electronic Components Datasheet

IMH21 Datasheet

NPN 600mA 20V Digital Transistors

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IMH21
NPN 600mA 20V Digital Transistors (Bias Resistor Built-in Transistors) For Muting.
Parameter
VCEO
VEBO
IC
R1
Tr1 and Tr2
20V
12V
600mA
10k
Outline
SMT6
(4)
(5)
(6)
(3)
(2)
(1)
IMH21
SOT-457 (SC-74)
Features
1) Built-In Biasing Resistors
2) Two DTC614T chips in one package.
3) Low saturation voltage, typically
VCE(sat) =40mV at IC / IB=50mA / 2.5mA, makes these
transistors ideal for muting circuits.
4) These transistors can be used at high current levels,
IC=600mA.
Inner circuit
5) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
Collector
(4)
Base
(5)
input resistors (see equivalent circuit).
6) The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing
R1
R1
of the input. They also have the advantage of
completely eliminating parasitic effects.
7) Lead Free/RoHS Compliant.
(3)
Emitter
(2)
Base
R1=10k
Emitter
(6)
(1)
Collector
Application
Muting circuit
Datasheet
Packaging specifications
Part No.
Package
IMH21
SMT6
Package
size
(mm)
2928
Taping
code
T110
Reel size
(mm)
Tape width
(mm)
Basic
ordering
unit (pcs)
180 8 3,000
Marking
H21
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
1/5
2014.10 - Rev.C


Rohm Semiconductor Electronic Components Datasheet

IMH21 Datasheet

NPN 600mA 20V Digital Transistors

No Preview Available !

IMH21
Absolute maximum ratings (Ta = 25°C)
<For Tr1 and Tr2 in common>
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
Data Sheet
Symbol
VCBO
VCEO
VEBO
IC
ICP *1
PD *2
Tj
Tstg
Values
20
20
12
600
1
300(Total) *3
150
55 to 150
Unit
V
V
V
mA
A
mW
°C
°C
Electrical characteristics (Ta = 25°C)
<For Tr1 and Tr2 in common>
Parameter
Symbol
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Input resistance
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
R1
Conditions
IC= 50A
IC= 1mA
IE= 50A
VCB = 20V
VEB = 12V
IC / IB= 50mA / 2.5mA
VCE= 5V, IC= 50mA
-
Transition frequency
fT *4
VCE = 10V, IE = 50mA
f = 100MHz
Output ON Resistance
Ron
VI = 5V
RL = 1k, f = 1kHz
*1 PW=10ms, Single pulse
*2 Each terminal mounted on a reference footprint
*3 200mW per element must not be exceeded.
*4 Characteristics of built-in transistor
Min.
20
20
12
-
-
-
820
7
-
-
Typ.
-
-
-
-
-
40
-
10
150
0.9
Max.
-
-
-
0.5
0.5
150
2700
13
Unit
V
V
V
A
A
mV
-
k
- MHz
-
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
2/5
2014.10 - Rev.C


Part Number IMH21
Description NPN 600mA 20V Digital Transistors
Maker Rohm
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IMH21 Datasheet PDF






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