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Rohm Semiconductor Electronic Components Datasheet

IMH14A Datasheet

NPN 100mA 50V Complex Digital Transistors

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UMH14N / IMH14A
NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)
Datasheet
Parameter
VCEO
IC
R1
Tr1 and Tr2
50V
100mA
47kW
lOutline
UMT6
(6)
(5)
(4)
(1)
(2)
(3)
UMH14N
SOT-353 (SC-88)
SMT6
(4)
(5)
(6)
(3)
(2)
(1)
IMH14A
SOT-457 (SC-74)
lFeatures
1) Built-In Biasing Resistors.
2) Two DTC144T chips in one package.
3) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see inner circuit).
4) The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing
of the input. They also have the advantage of
completely eliminating parasitic effects.
5) Only the on/off conditions need to be set for
operation, making the circuit design easy.
6) Lead Free/RoHS Compliant.
lApplication
Inverter circuit, Interface circuit, Driver circuit
lInner circuit
Collector
(6)
Base
(5)
Collector
(4)
DTr1
R1
DTr2
R1
(1)
Emitter
(2)
Emitter
(3)
Base
UMH14N
Base
(4)
Emitte
(5)
Emitter
(6)
DTr2
R1
DTr1
R1
(3) (2)
Collector Base
(1)
Collector
IMH14A
lPackaging specifications
Part No.
Package
Package
size
(mm)
UMH14N
UMT6
2021
IMH14A
SMT6
2928
Taping
code
TR
T108
Reel size
(mm)
Tape width
(mm)
Basic
ordering
unit (pcs)
Marking
180
8
3,000
H14
180
8
3,000
H14
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
1/5
2013.07 - Rev.B


Rohm Semiconductor Electronic Components Datasheet

IMH14A Datasheet

NPN 100mA 50V Complex Digital Transistors

No Preview Available !

UMH14N / IMH14A
lAbsolute maximum ratings (Ta = 25°C)
<For DTr1 and DTr2 in common>
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector Power dissipation UMH14N
IMH14A
Junction temperature
Range of storage temperature
Data Sheet
Symbol
VCBO
VCEO
VEBO
IC*1
PD *2
Tj
Tstg
Values
50
50
5
100
150 (Total)*3
300 (Total)*4
150
-55 to +150
Unit
V
V
V
mA
mW
mW
°C
°C
lElectrical characteristics(Ta = 25°C)
<For DTr1 and DTr2 in common>
Parameter
Symbol
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
BVCBO
BVCEO
IC= 50mA
IC= 1mA
Emitter-base breakdown voltage
Collector cut-off current
BVEBO
ICBO
IE= 50mA
VCB = 50V
Emitter cut-off current
IEBO VEB = 4V
Collector-emitter saturation voltage VCE(sat) IC / IB= 10mA / 1mA
DC current gain
hFE VCE= 5V , IC= 1mA
Input resistance
R1 -
Min.
50
50
5
-
-
-
100
32.9
Transition frequency
fT *1
VCE = 10V, IE = -5mA
f = 100MHz
-
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference footprint
*3 120mW per element must not be exceeded.
*4 200mW per element must not be exceeded.
Typ.
-
-
-
-
-
-
250
47
250
Max.
-
-
-
0.5
0.5
0.3
600
61.1
-
Unit
V
V
V
mA
mA
V
-
kW
MHz
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
2/5
2013.07 - Rev.B


Part Number IMH14A
Description NPN 100mA 50V Complex Digital Transistors
Maker Rohm
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IMH14A Datasheet PDF






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