• Part: BR34E02NUX-3
  • Description: DDR2/DDR3 SPD Memory
  • Manufacturer: ROHM
  • Size: 486.61 KB
BR34E02NUX-3 Datasheet (PDF) Download
ROHM
BR34E02NUX-3

Description

BR34E02-3 Series is 256×8 bit Electrically Erasable PROM (Based on Serial Presence Detect) • Features 1) 256×8 bit architecture serial EEPROM 2) Wide operating voltage range: 1.7V-5.5V 3) Two-wire serial interface 4) Self-Timed Erase and Write Cycle 5) Page Write Function (16byte) 6) Write Protect Mode Settable Reversible Write Protect Function: 00h-7Fh Write Protect 1 (Onetime Rom) : 00h-7Fh Write Protect 2 (Hardwire WP PIN) : 00h-FFh 7) Low Power consumption Write (at 1.7V ) : 0.4mA (typ.) Read (at 1.7V ) : 0.1mA(typ.) Standby ( at 1.7V ) : 0.1µA(typ.) 8) DATA security Write protect feature (WP pin) Inhibit to WRITE at low VCC 9) pact package: TSSOP-B8, VSON008X2030 10) High reliability fine pattern CMOS technology 11) Rewriting possible up to 1,000,000 times 12) Data retention: 40 years 13) Noise reduction Filtered inputs in SCL / SDA 14) Initial data FFh at all addresses • BR34E02-3 Series Capacity 2Kbit Bit format 256X8 Type BR34E02-3 Power Source Voltage 1.7V~5.5V TSSOP-B8 • VSON008X2030 • No.11002EAT05 .DataSheet.co.kr • • Reduce by 3.3mW( • 1), 3.0 mW( • 2)/C over 25C • Remended operating conditions Parameter Supply Voltage Input Voltage Symbol VCC VIN Ratings 1.7~5.5 0~VCC Unit V V .rohm.

Key Features

  • VSON008X2030
  • No.11002EAT05