2SB1412
Low frequency transistor (- 20V,- 5A)
2SB1412 z Features 1) Low VCE(sat).
VCE(sat) =
- 0.35V (Typ.) (IC/IB =
- 4A /
- 0.1A) 2) Excellent DC current gain characteristics. 3) plements the 2SD2118. z Structure Epitaxial planar type PNP silicon transistor z Dimensions (Unit : mm)
ROHM : CPT3 EIAJ : SC-63
∗ Denotes h FE
(1) Base (2) Collector (3) Emitter z Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Collector-base voltage
VCBO
- 30
Collector-emitter voltage
VCEO
- 20
Emitter-base voltage
VEBO
- 6
Collector current
- 5 IC
- 10
Collector power dissipation
1 10
Junction temperature
Tj
Storage temperature
Tstg
- 55 to 150
∗1 Single pulse, Pw=10ms
Unit V V V
A(DC)
A(Pulse) ∗1
W W(Tc=25°C)
°C °C z Electrical characteristics (Ta=25°C)
Parameter
Symbol...
