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2SB1412 - Low Frequency Transistor

Download the 2SB1412 datasheet PDF. This datasheet also covers the 2SB1412I variant, as both devices belong to the same low frequency transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Low VCE(sat) VCE(sat) = -0.35V(Typ) (IC/IB=-4A/-0.1A).
  • Excellent DC current gain characteristics.
  • Complements the 2SD2118.
  • RoHS compliant with Halogen-free Product Specification 2SB1412I 2SB1412 Ordering Information Part Number Package 2SB1412I-P TO-251 2SB1412I-Q TO-251 2SB1412I-R TO-251 2SB1412-P TO-252 2SB1412-Q TO-252 2SB1412-R TO-252 TO-251 TO-252 Shipping 80/Tube 80/Tube 80/Tube 80/Tube or2500/Tape Reel 80/Tube or2500/Tape Reel 80/Tube or2500/Tape Ree.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2SB1412I-GME.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Galaxy Microelectronics

Part Number Description
2SB1412I Low Frequency Transistor
2SB1424 Transistor
2SB1440 Silicon PNP epitaxial planer type Transistor
2SB1073 PNP Transistor
2SB1119 PNP Epitaxial Planar Silicon Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Low Frequency Transistor FEATURES  Low VCE(sat) VCE(sat) = -0.35V(Typ) (IC/IB=-4A/-0.