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RJK6029DJA Datasheet, Renesas Technology

RJK6029DJA switching equivalent, silicon n channel mos fet high speed power switching.

RJK6029DJA Avg. rating / M : 1.0 rating-11

datasheet Download

RJK6029DJA Datasheet

Features and benefits


* Low on-resistance RDS(on) = 13.5  typ. (at ID = 0.1 A, VGS = 10 V, Ta = 25C)
* Low drive current
* High density mounting REJ03G1895-0100 Rev.1.00 Jun 18, .

Application

or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics.

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RJK6029DJA Page 1 RJK6029DJA Page 2 RJK6029DJA Page 3

TAGS
RJK6029DJA
Silicon
Channel
MOS
FET
High
Speed
Power
Switching
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Renesas Technology
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