RJK0454DPB fet equivalent, silicon n channel power mos fet.
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*
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* High speed switching Low drive current Low on-resistance RDS(on) = 3.9 m typ. (at VGS = 10 V)
* Pb-free
* Halogen-free
* High density.
or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics.
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