RJK0451DPB Silicon N Channel Power MOS FET
• High speed switching
• Capable of 4.5 V gate drive
• Low drive current
• High density mounting
• Low on-resistance RDS(on) = 5.5 m typ. (at VGS = .
for each Renesas Electronics product depends on the product's quality grade, as indicated below. "Standard": Computers; .
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