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RJK0451DPB Renesas Technology

RJK0451DPB Silicon N Channel Power MOS FET

RJK0451DPB Avg. rating / M : star-13

datasheet Download

RJK0451DPB Datasheet

Features and benefits


• High speed switching
• Capable of 4.5 V gate drive
• Low drive current
• High density mounting
• Low on-resistance RDS(on) = 5.5 m typ. (at VGS = .

Application

for each Renesas Electronics product depends on the product's quality grade, as indicated below. "Standard": Computers; .

Image gallery

RJK0451DPB RJK0451DPB RJK0451DPB

TAGS
RJK0451DPB
Silicon
Channel
Power
MOS
FET
RJK0452DPB
RJK0454DPB
RJK0455DPB
Renesas Technology
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