logo

RJK03N5DPA Datasheet, Renesas Technology

RJK03N5DPA fet equivalent, built in sbd n channel power mos fet.

RJK03N5DPA Avg. rating / M : 1.0 rating-15

datasheet Download (Size : 269.45KB)

RJK03N5DPA Datasheet

Features and benefits


* High speed switching
* Capable of 4.5 V gate drive
* Low drive current
* High density mounting
* Low on-resistance
* Pb-free
* Halogen-free .

Application

for each Renesas Electronics product depends on the product's quality grade, as indicated below. "Standard": Computers; .

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and i.

Image gallery

RJK03N5DPA Page 1 RJK03N5DPA Page 2 RJK03N5DPA Page 3

TAGS

RJK03N5DPA
Built
SBD
Channel
Power
MOS
FET
Renesas Technology

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts