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RJK03N4DPA Datasheet, Renesas Technology

RJK03N4DPA fet equivalent, built in sbd n channel power mos fet.

RJK03N4DPA Avg. rating / M : 1.0 rating-11

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RJK03N4DPA Datasheet

Features and benefits


* High speed switching
* Capable of 4.5 V gate drive
* Low drive current
* High density mounting
* Low on-resistance
* Pb-free
* Halogen-free .

Application

for each Renesas Electronics product depends on the product's quality grade, as indicated below. "Standard": Computers; .

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and i.

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TAGS

RJK03N4DPA
Built
SBD
Channel
Power
MOS
FET
RJK03N0DPA
RJK03N1DPA
RJK03N2DPA
Renesas Technology

Manufacturer


Renesas (https://www.renesas.com/) Technology

Related datasheet

RJK03N4DPA

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