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RJK03M8DNS Datasheet, Renesas Technology

RJK03M8DNS fet equivalent, silicon n channel power mos fet.

RJK03M8DNS Avg. rating / M : 1.0 rating-11

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RJK03M8DNS Datasheet

Features and benefits


* High speed switching
* Capable of 4.5 V gate drive
* Low drive current
* High density mounting
* Low on-resistance RDS(on) = 4.3 m typ. (at VGS = 1.

Application

for each Renesas Electronics product depends on the product's quality grade, as indicated below. "Standard": Computers; .

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and i.

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TAGS

RJK03M8DNS
Silicon
Channel
Power
MOS
FET
Renesas Technology

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