R1LV0416CBG-I
R1LV0416CBG-I is Wide Temperature Range Version 4M SRAM manufactured by Renesas.
Description
The R1LV0416CBG-I is a 4-Mbit static RAM organized 256-kword × 16-bit. The R1LV0416C-I Series has realized higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell). The R1LV0416CBG-I Series offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It has packaged in 48-pin CSP (0.75 mm ball pitch).
Features
- Single 2.5 V and 3.0 V supply: 2.2 V to 3.6 V
- Fast access time: 55/70 ns (max)
- Power dissipation: Active: 5.0 m W/MHz (typ)(VCC = 2.5 V) : 6.0 m W/MHz (typ) (VCC = 3.0 V) Standby: 1.25 µW (typ) (VCC = 2.5 V) : 1.5 µW (typ) (VCC = 3.0 V)
- pletely static memory. No clock or timing strobe required
- Access and cycle times are equal.
- mon data input and output. Three state output
- Battery backup operation. 2 chip selection for battery backup
- Temperature range:
- 40 to +85°C
Ordering Information
Type No. R1LV0416CBG-5SI R1LV0416CBG-7LI Access time 55 ns 70 ns Package 48-ball CSP with 0.75 mm ball pitch (48FHH)
Preliminary: The specifications of this device are subject to change without notice. Please contact your nearest Renesas Technology’s Sales Dept. regarding specifications.
Rev.0.01, Jan.11.2005, page 1 of 14
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R1LV0416CBG-I Series
Pin Arrangement
48-ball CSP
1 A
LB#
OE#
A0
A1
A2
CS2
I/O8
UB#
A3
A4
CS1#
I/O0...
