R1LV0416CBG-I Description
The R1LV0416CBG-I is a 4-Mbit static RAM organized 256-kword × 16-bit. The R1LV0416C-I Series has realized higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell). The R1LV0416CBG-I Series offers low power standby power dissipation;.
R1LV0416CBG-I Key Features
- Single 2.5 V and 3.0 V supply: 2.2 V to 3.6 V
- Fast access time: 55/70 ns (max)
- Power dissipation: Active: 5.0 mW/MHz (typ)(VCC = 2.5 V) : 6.0 mW/MHz (typ) (VCC = 3.0 V) Standby: 1.25 µW (typ) (VC
- pletely static memory. No clock or timing strobe required
- Access and cycle times are equal
- mon data input and output. Three state output
- Battery backup operation. 2 chip selection for battery backup
- Temperature range: -40 to +85°C
- V CC V SS