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R1LV0416CSB-7LI - 4M SRAM

Download the R1LV0416CSB-7LI datasheet PDF. This datasheet also covers the R1LV0416CSB-5SI variant, as both devices belong to the same 4m sram family and are provided as variant models within a single manufacturer datasheet.

Description

The R1LV0416C-I is a 4-Mbit static RAM organized 256-kword × 16-bit.

R1LV0416C-I Series has realized higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell).

Features

  • Single 2.5 V and 3.0 V supply: 2.2 V to 3.6 V.
  • Fast access time: 55/70 ns (max).
  • Power dissipation:  Active: 5.0 mW/MHz (typ)(VCC = 2.5 V) : 6.0 mW/MHz (typ) (VCC = 3.0 V)  Standby: 1.25 µW (typ) (VCC = 2.5 V) : 1.5 µW (typ) (VCC = 3.0 V).
  • Completely static memory.  No clock or timing strobe required.
  • Equal access and cycle times.
  • Common data input and output.  Three state output.
  • Battery backup operation.  2 chip selection for.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (R1LV0416CSB-5SI-RenesasTechnology.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
R1LV0416D 4M SRAM Renesas
R1LV0416DBG-5SI 4M SRAM Renesas
R1LV0416DBG-7LI 4M SRAM Renesas
R1LV0416DSB-5SI 4M SRAM Renesas
R1LV0416DSB-7LI 4M SRAM Renesas

Other Datasheets by Renesas

Part Number Description
R1LV0416CSB-5SI 4M SRAM
R1LV0416C-I Wide Temperature Range Version 4M SRAM
R1LV0416C-I 4M SRAM
R1LV0416CBG-I Wide Temperature Range Version 4M SRAM
R1LV0108E 1Mb Advanced LPSRAM (128k word x 8bit)

Full PDF Text Transcription

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R1LV0416C-I Series Wide Temperature Range Version 4 M SRAM (256-kword × 16-bit) REJ03C0105-0100Z Rev. 1.00 Aug.05.2003 Description The R1LV0416C-I is a 4-Mbit static RAM organized 256-kword × 16-bit. R1LV0416C-I Series has realized higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell). The R1LV0416C-I Series offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It has packaged in 44-pin TSOP II. Features • Single 2.5 V and 3.0 V supply: 2.2 V to 3.6 V • Fast access time: 55/70 ns (max) • Power dissipation:  Active: 5.0 mW/MHz (typ)(VCC = 2.5 V) : 6.0 mW/MHz (typ) (VCC = 3.0 V)  Standby: 1.25 µW (typ) (VCC = 2.5 V) : 1.5 µW (typ) (VCC = 3.0 V) • Completely static memory.
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