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HAT2279H
Silicon N Channel Power MOS FET Power Switching
Features
• High speed switching • Capable of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance
RDS(on) = 9.5 mΩ typ. (at VGS = 10 V) • Lead Free
Outline
RENESAS Package code: PTZZ0005DA-A) (Package name: LFPAK )
5 D 5
1 234
4 G
SSS 123
REJ03G1464-0200 Rev.2.00
Jul 05, 2006
1, 2, 3 Source
4
Gate
5
Drain
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to Case Thermal Resistance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tch = 25°C, Rg ≥ 50 Ω 3.
HAT2279H Datasheet
