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HAF2012S Datasheet, Renesas Technology

HAF2012S switching equivalent, silicon n channel mos fet series power switching.

HAF2012S Avg. rating / M : 1.0 rating-11

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HAF2012S Datasheet

Features and benefits


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* Logic level operation (4 to 6 V Gate drive) High endurance capability against to the short circuit Built-in the over temperature shut-down circuit.

Application

such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the .

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TAGS
HAF2012S
Silicon
Channel
MOS
FET
Series
Power
Switching
HAF2012
HAF2012L
HAF2011
Renesas Technology
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