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HAF2011 - Silicon N Channel MOS FET Series Power Switching

Features

  • This FET has the over temperature shut.
  • down capability sensing to the junction temperature. This FET has the built.
  • in over temperature shut.
  • down circuit in the gate area. And this circuit operation to shut.
  • down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.
  • Logic level operation (4 to 6 V Gate drive) High endurance capability against to the short circuit Built.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HAF2011(L),HAF2011(S) Silicon N Channel MOS FET Series Power Switching Target specification ADE-208-738 (Z) 1st. Edition Jan. 1999 Features This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.
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