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H5N3003P
Silicon N Channel MOS FET High Speed Power Switching
REJ03G0007-0200Z (Previous ADE-208-1547A(Z)) Rev.2.00 Aug.01.2003
Features
• Low on-resistance • Low leakage current • High Speed Switching
Outline
TO-3P
D
G
1
S
2
3
1. Gate 2. Drain (Flange) 3. Source
Rev.2.00, Aug.01.2003, page 1 of 9
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H5N3003P
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case Thermal Impedance Channel temperature Storage temperature Symbol VDSS VGSS ID ID (pulse) IDR IDR (pulse) Note1 IAPNote3 Pch
Note2 Note1
Ratings 300 ±30 40 160 40 160 30 150 0.