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H5N2505DS - Silicon N Channel MOS FET High Speed Power Switching

Download the H5N2505DS datasheet PDF. This datasheet also covers the H5N2505DL variant, as both devices belong to the same silicon n channel mos fet high speed power switching family and are provided as variant models within a single manufacturer datasheet.

Features

  • Low on-resistance.
  • Low drive current www. DataSheet4U. com.
  • High speed switching.
  • Low gate change.
  • Avalanche ratings Outline.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (H5N2505DL_RenesasTechnology.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number H5N2505DS
Manufacturer Renesas
File Size 152.76 KB
Description Silicon N Channel MOS FET High Speed Power Switching
Datasheet download datasheet H5N2505DS Datasheet

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Other Datasheets by Renesas

Part Number Description
H5N2505DL Silicon N Channel MOS FET High Speed Power Switching
H5N2501LD Silicon N Channel MOS FET High Speed Power Switching
H5N2501LM Silicon N Channel MOS FET High Speed Power Switching
H5N2501LS Silicon N Channel MOS FET High Speed Power Switching
H5N2502CF Silicon N Channel MOS FET High Speed Power Switching

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
H5N2505DL, H5N2505DS Silicon N Channel MOS FET High Speed Power Switching REJ03G1107-0300 Rev.3.00 Oct 16, 2006 Features • Low on-resistance • Low drive current www.DataSheet4U.com • High speed switching • Low gate change • Avalanche ratings Outline RENESAS Package code: PRSS0004ZD-B (Package name: DPAK(L)-(2) ) 4 D 4 1. Gate 2. Drain 3. Source 4. Drain RENESAS Package code: PRSS0004ZD-C (Package name: DPAK(S) ) G 1 2 3 S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case thermal Impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2.
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