2SK3446 - Silicon N Channel Power MOS FET

Features

Capable of 2.5 V gate drive.
Low drive current.
Low on-resistance RDS (on) = 1.5 Ω typ. (at VGS = 4 V) Outline.

2SK3446 silicon n channel power mos fet by Renesas Technology - Datasheet Preview

Datasheet Details

Part number	2SK3446
Manufacturer	Renesas
File Size	72.67 KB
Description	Silicon N Channel Power MOS FET
Datasheet	2SK3446 Datasheet

📁 Similar Datasheet

2SK344 - N-Channel MOSFET (Hitachi)
2SK3440 - N-Channel MOSFET (Toshiba Semiconductor)
2SK3441 - N-Channel MOSFET (Toshiba Semiconductor)
2SK3442 - N-Channel MOSFET (Toshiba Semiconductor)
2SK3443 - N-Channel MOSFET (Toshiba Semiconductor)
2SK3444 - N-Channel MOSFET (Toshiba Semiconductor)
2SK3445 - N-Channel MOSFET (Toshiba Semiconductor)
2SK3448 - N-Channel MOSFET (Sanyo Semicon Device)
2SK3449 - N-Channel MOSFET (Sanyo Semicon Device)
2SK34 - Transistor (ETC)

Other Datasheets by Renesas Technology

2SK3447 - Silicon N Channel Power MOS FET
2SK3000 - Silicon N Channel MOS FET
2SK3239 - Silicon N-Channel MOSFET
2SK3239L - Silicon N-Channel MOSFET
2SK3239R - Silicon N-Channel MOSFET
2SK3274 - Slilicon N Channel MOS FET
2SK3736 - Silicon N-Channel MOSFET
2SK1135 - Silicon N-Channel MOS FET

Full PDF Text Transcription

Click to expand full text

2SK3446 Silicon N Channel Power MOS FET Power Switching Features • Capable of 2.5 V gate drive • Low drive current • Low on-resistance RDS (on) = 1.5 Ω typ. (at VGS = 4 V) Outline RENESAS Package code: PRSS0003DC-A (Package name: TO-92MOD) 321 G REJ03G1100-0800 (Previous: ADE-208-1566F) Rev.8.00 Sep 07, 2005 D 1. Source 2. Drain 3. Gate S Rev.8.00 Sep 07, 2005 page 1 of 6 2SK3446 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Ta = 25°C Symbol VDSS VGSS ID ID (pulse) Note 1 IDR Pch Note 2 Tch Tstg Value 150 ±10 1 4 1 0.

Published: Oct 18, 2006 |