uPA2791GR fet equivalent, switching n- and p-channel power mos fet.
* Low on-state resistance
N-channel RDS(on)1 = 36.0 mΩ MAX. (VGS = 10 V, ID = 3.0 A) RDS(on)2 = 50.0 mΩ MAX. (VGS = 4.5 V, ID = 3.0 A)
P-channel RDS(on)1 = 82 mΩ MAX..
The μ PA2791GR is N- and P-channel MOS Field Effect
Transistors designed for switching application.
FEATURES
* Low on-state resistance
N-channel RDS(on)1 = 36.0 mΩ MAX. (VGS = 10 V, ID = 3.0 A) RDS(on)2 = 50.0 mΩ MAX. (VGS = 4.5 V, ID = 3.0 A)
P-.
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