UPA2793AGR datasheet, mosfet equivalent, Renesas

Features and benefits

* Low on-state resistance N-channel RDS(on)1 = 15 mΩ MAX. (VGS = 10 V, ID = 3.5 A) RDS(on)2 = 23 mΩ MAX. (VGS = 4.5 V, ID = 3.5 A) P-channel RDS(on)1 = 26 mΩ MAX. (VG.

Description

The μ PA2793AGR is N- and P-channel MOS Field Effect Transistors designed for Motor Drive application. FEATURES
* Low on-state resistance N-channel RDS(on)1 = 15 mΩ MAX. (VGS = 10 V, ID = 3.5 A) RDS(on)2 = 23 mΩ MAX. (VGS = 4.5 V, ID = 3.5 A) P-c.

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