uPA2757GR datasheet, fet equivalent, Renesas

Avg. rating / M : 1.0 rating-1

datasheet Download (Size : 309.63KB)

Features and benefits

* Low on-state resistance RDS(on)1 = 36.0 mΩ MAX. (VGS = 10 V, ID = 3.0 A) RDS(on)2 = 50.0 mΩ MAX. (VGS = 4.5 V, ID = 3.0 A)
* Low gate charge QG = 10 nC TYP. (VG.

Description

The μ PA2757GR is Dual N-channel MOS Field Effect Transistors designed for switching application. FEATURES
* Low on-state resistance RDS(on)1 = 36.0 mΩ MAX. (VGS = 10 V, ID = 3.0 A) RDS(on)2 = 50.0 mΩ MAX. (VGS = 4.5 V, ID = 3.0 A)
* Low gate.

Image gallery