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uPA2755AGR Datasheet, Renesas

uPA2755AGR fet equivalent, switching n-channel power mos fet.

uPA2755AGR Avg. rating / M : 1.0 rating-13

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uPA2755AGR Datasheet

Features and benefits


* Dual chip type
* Low on-state resistance RDS(on)1 = 18 mΩ MAX. (VGS = 10 V, ID = 4.0 A) RDS(on)2 = 29 mΩ MAX. (VGS = 4.5 V, ID = 4.0 A)
* Low input capacita.

Application

of notebook computers. FEATURES
* Dual chip type
* Low on-state resistance RDS(on)1 = 18 mΩ MAX. (VGS = 10 V, ID.

Description

The μ PA2755AGR is Dual N-channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers. FEATURES
* Dual chip type
* Low on-state resistance RDS(on)1 = 18 mΩ MAX. (VGS = 10 V, ID = 4.

Image gallery

uPA2755AGR Page 1 uPA2755AGR Page 2 uPA2755AGR Page 3

TAGS

uPA2755AGR
SWITCHING
N-CHANNEL
POWER
MOS
FET
Renesas

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