* Low on-state resistance RDS(on)1 = 3.3 mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 4.6 mΩ MAX. (VGS = 4.5 V, ID = 15 A)
* Built-in gate protection diode
* Th.

of a notebook computer. FEATURES
* Low on-state resistance RDS(on)1 = 3.3 mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 .

The μ PA2743T1A is N-channel MOS Field Effect Transistor designed for power management applications of a notebook computer. FEATURES
* Low on-state resistance RDS(on)1 = 3.3 mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 4.6 mΩ MAX. (VGS = 4.5 V, ID.

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