logo

RQK2501YGDQA Datasheet, Renesas

RQK2501YGDQA fet equivalent, silicon n-channel mos fet.

RQK2501YGDQA Avg. rating / M : 1.0 rating-12

datasheet Download

RQK2501YGDQA Datasheet

Features and benefits


* High drain to source voltage and Low gate drive VDSS : 250 V and 2.5 V gate drive
* Low drive current
* High speed switching
* Small traditional package.

Application

for each Renesas Electronics product depends on the product's quality grade, as indicated below. "Standard": Computers; .

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and i.

Image gallery

RQK2501YGDQA Page 1 RQK2501YGDQA Page 2 RQK2501YGDQA Page 3

TAGS

RQK2501YGDQA
Silicon
N-Channel
MOS
FET
RQK2001HQDQA
RQK0201QGDQA
RQK0202RGDQA
Renesas

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts