RQK2501YGDQA fet equivalent, silicon n-channel mos fet.
* High drain to source voltage and Low gate drive VDSS : 250 V and 2.5 V gate drive
* Low drive current
* High speed switching
* Small traditional package.
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of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and i.
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