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RQK0202RGDQA - N-Channel MOSFET

Description

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Features

  • Low on-resistance RDS(on) = 42 mΩ typ (VGS = 4.5 V, ID = 1.9 A).
  • Low drive current.
  • High speed switching.
  • 2.5 V gate drive Outline.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RQK0202RGDQA Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 42 mΩ typ (VGS = 4.5 V, ID = 1.9 A) • Low drive current • High speed switching • 2.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 2 Note: Marking is “RG”. Preliminary Datasheet R07DS0302EJ0500 Rev.5.00 Jan 10, 2014 3 D G 1. Source 2 2. Gate 3. Drain S 1 Absolute Maximum Ratings Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body - drain diode reverse drain current Channel dissipation VDSS VGSS ID ID(pulse) Note1 IDR Pch Note2 Channel temperature Tch Storage temperature Tstg Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2. When using the glass epoxy board (FR-4: 40 x 40 x 1 mm) Ratings 20 ±12 3.8 12 3.8 0.
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