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RMQS3A1836DGBA Datasheet, Renesas

RMQS3A1836DGBA sram equivalent, 18-mbit qdr-ii sram.

RMQS3A1836DGBA Avg. rating / M : 1.0 rating-11

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RMQS3A1836DGBA Datasheet

Features and benefits


* Power Supply z 1.8 V for core (VDD), 1.4 V to VDD for I/O (VDDQ)
* Clock z z z z z Fast clock cycle time for high bandwidth Two input clocks (K and /K) for pr.

Application

which require synchronous operation, high speed, low voltage, high density and wide bit configuration. These products ar.

Description

The RMQS3A1836DGBA is a 524,288-word by 36-bit and the RMQS3A1818DGBA is a 1,048,576-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchr.

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TAGS

RMQS3A1836DGBA
18-Mbit
QDR-II
SRAM
Renesas

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