RMQS3A1836DGBA sram equivalent, 18-mbit qdr-ii sram.
* Power Supply z 1.8 V for core (VDD), 1.4 V to VDD for I/O (VDDQ)
* Clock z z z z
z
Fast clock cycle time for high bandwidth Two input clocks (K and /K) for pr.
which require synchronous operation, high speed, low voltage, high density and wide bit configuration. These products ar.
The RMQS3A1836DGBA is a 524,288-word by 36-bit and the RMQS3A1818DGBA is a 1,048,576-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchr.
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