RMQS3A1818DGBA Datasheet | Renesas

Datasheet RMQS3A1836DGBA, RMQS3A1818DGBA 18-Mbit QDR™ II SRAM 4-word Burst R10DS0247EJ0100 Rev.1.00 Jan. 13, 2015 Description The RMQS3A1836DGBA is a 524,288-word by 36-bit and the RMQS3A1818DGBA is a 1,048,576-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, high speed, low voltage, high density and wide bit configuration. These products are packaged in 165-pin plastic FBGA package. Features - Power Supply z 1.8 V for core (VDD), 1.4 V to VDD for I/O (VDDQ) - Clock z z z z z Fast clock cycle time for high bandwidth Two input clocks (K and /K) for precise DDR timing at clock rising edges only Two input clocks for output data (C and /C) to minimize clock skew and flight time mismatches Two output echo clocks (CQ and /CQ) simplify data capture in high-speed systems Clock-stop capability with μs restart - I/O z z z z z Separate independent read and write data ports with concurrent transactions 100% bus utilization DDR read and write operation HSTL I/O User programmable output impedance PLL circuitry for wide output data valid window and future frequency scaling - Function z Four-tick burst for low DDR transaction size z Internally self-timed write control z Simple control logic for easy depth expansion z JTAG 1149.1 patible test access port - Package z 165 FBGA package (13 x 15 x 1.4 mm) R10DS0247EJ0100 Rev.1.00 Jan. 13, 2015 Page 1 of 29 RMQS3A1836DGBA, RMQS3A1818DGBA Datasheet Orderable Part...