* Trench gate and thin wafer technology (G6H-II series)
* Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ
* High speed switching: tf = 100 n.

RJP30H2DPK-M0

RJP30H1

RJP30H1DPD

RJP30H1DPP-M0

RJP3053DPP

RJP3054DPP

RJP3055DPP

RJP3056DPK

RJP3057DPK

RJP3063DPP

RJP3064DPP

RJP3065DPP

RJP3066DPK

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