RJP30H1 datasheet, igbt equivalent, Renesas

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Features and benefits

* Trench gate and thin wafer technology (G6H-II series)
* High speed switching: tr = 80 ns typ., tf = 150 ns typ.
* Low collector to emitter saturation voltag.

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TAGS

RJP30H1

N-Channel

IGBT

Renesas

Manufacturer

Renesas (https://www.renesas.com/)

Related datasheet

RJP30H1 Datasheet, Renesas

Features and benefits