RJP30E2DPK-M0
RJP30E2DPK-M0 is N-Channel Power MOSFET manufactured by Renesas.
Preliminary Datasheet
Silicon N Channel IGBT High Speed Power Switching
Features
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- - Trench gate technology (G5H series) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ Low leak current ICES = 1 μA max R07DS0348EJ0100 Rev.1.00 Apr 12, 2011
Outline
RENESAS Package code: PRSS0004ZH-A (Package name: TO-3PSG)
C 4
1. Gate 2. Collector 3. Emitter 4. Collector...
