Datasheet4U Logo Datasheet4U.com

RJP30E2DPK-M0 - N-Channel Power MOSFET

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment.

Features

  • Trench gate technology (G5H series) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ Low leak current ICES = 1 μA max R07DS0348EJ0100 Rev.1.00 Apr 12, 2011 Outline.

📥 Download Datasheet

Datasheet preview – RJP30E2DPK-M0

Datasheet Details

Part number RJP30E2DPK-M0
Manufacturer Renesas
File Size 219.53 KB
Description N-Channel Power MOSFET
Datasheet download datasheet RJP30E2DPK-M0 Datasheet
Additional preview pages of the RJP30E2DPK-M0 datasheet.

📁 Similar Datasheet

Other Datasheets by Renesas

Full PDF Text Transcription

Click to expand full text
Preliminary Datasheet RJP30E2DPK-M0 Silicon N Channel IGBT High Speed Power Switching Features • • • • Trench gate technology (G5H series) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ Low leak current ICES = 1 μA max R07DS0348EJ0100 Rev.1.00 Apr 12, 2011 Outline RENESAS Package code: PRSS0004ZH-A (Package name: TO-3PSG) C 4 G 1. Gate 2. Collector 3. Emitter 4. Collector (Flange) E 1 2 3 Absolute Maximum Ratings Item Collector to emitter voltage Gate to emitter voltage Collector current Collector peak current Collector dissipation Junction to case thermal impedance Junction temperature Storage temperature Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2. Tc = 25°C www.DataSheet.co.
Published: |