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RJP30E2DPK-M0 - N-Channel Power MOSFET

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Renesas

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RJP30E2DPK-M0 N-Channel Power MOSFET by Renesas - Datasheet Preview — Datasheet preview – RJP30E2DPK-M0

Datasheet Details

Part number	RJP30E2DPK-M0
Manufacturer	Renesas
File Size	219.53 KB
Description	N-Channel Power MOSFET
Datasheet	RJP30E2DPK-M0 Datasheet
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Product details

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

Features

Trench gate technology (G5H series) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ Low leak current ICES = 1 μA max R07DS0348EJ0100 Rev.1.00 Apr 12, 2011 Outline.

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Published: May 2, 2012 |