* Trench gate technology (G5H series)
* Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ
* High speed switching tf = 150 ns typ
* Low leak.

RJP30E2DPK-M0

RJP30E2DPP-M0

RJP30E3DPK-M0

RJP30E3DPP-M0

RJP3053DPP

RJP3054DPP

RJP3055DPP

RJP3056DPK

RJP3057DPK

RJP3063DPP

RJP3064DPP

RJP3065DPP

RJP3066DPK

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