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RJP30E2 - N-Channel Power MOSFET

Download the RJP30E2 datasheet PDF. This datasheet also covers the RJP30E2DPP-M0 variant, as both devices belong to the same n-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • Trench gate technology (G5H series).
  • Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ.
  • High speed switching tf = 150 ns typ.
  • Low leak current ICES = 1 μA max.
  • Isolated package TO-220FL Outline.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (RJP30E2DPP-M0_Renesas.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number RJP30E2
Manufacturer Renesas
File Size 213.25 KB
Description N-Channel Power MOSFET
Datasheet download datasheet RJP30E2 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
RJP30E2DPP-M0 Silicon N Channel IGBT High Speed Power Switching Features • Trench gate technology (G5H series) • Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ • High speed switching tf = 150 ns typ • Low leak current ICES = 1 μA max • Isolated package TO-220FL Outline RENESAS Package code: PRSS0003AF-A) (Package name: TO-220FL) Preliminary Datasheet R07DS0347EJ0200 Rev.2.00 Apr 12, 2011 C 1 23 1. Gate 2. Collector G 3. Emitter E Absolute Maximum Ratings Item Collector to emitter voltage Gate to emitter voltage Collector current Collector peak current Collector dissipation Junction to case thermal impedance Junction temperature Storage temperature Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2. Tc = 25°C www.DataSheet.co.
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