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RJH30H1DPP-M0 Datasheet, Renesas

RJH30H1DPP-M0 switching equivalent, high speed power switching.

RJH30H1DPP-M0 Avg. rating / M : 1.0 rating-12

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RJH30H1DPP-M0 Datasheet

Features and benefits


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* Trench gate and thin wafer technology (G6H-II series) High speed switching: tr =80 ns typ., tf = 150 ns typ. Low collector to emitter .

Application

or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics.

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and i.

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TAGS

RJH30H1DPP-M0
High
Speed
Power
Switching
RJH30H2DPK-M0
RJH3047
RJH3047ADPK
Renesas

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