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RJH1CF7RDPQ-80 Datasheet, Renesas

RJH1CF7RDPQ-80 switching equivalent, high speed power switching.

RJH1CF7RDPQ-80 Avg. rating / M : 1.0 rating-11

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RJH1CF7RDPQ-80 Datasheet

Features and benefits

Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating Low collector to emitter saturation voltage .

Application

or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics.

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and i.

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TAGS

RJH1CF7RDPQ-80
High
Speed
Power
Switching
Renesas

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