R1QLA4418RBG architecture equivalent, 144-mbit ddrii+ sram 2-word burst architecture.
* Power Supply z 1.8 V for core (VDD), 1.4 V to VDD for I/O (VDDQ)
* Clock z z z
z
Fast clock cycle time for high bandwidth Two input clocks (K and /K) for prec.
which require synchronous operation, high speed, low voltage, high density and wide bit configuration. These products ar.
The R1QLA4436RBG is a 4,194,304-word by 36-bit and the R1QLA4418RBG is a 8,388,608-word by 18-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synch.
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