R1Q6A7236ABG ram equivalent, 72-mbit ddrii sram separate i/o 2-word burst ram.
႑ Power Supply
* 1.8 V for core (VDD), 1.4 V to VDD for I/O (VDDQ)
႑ Clock
* Fast clock cycle time for high bandwidth
* Two input clocks (K and /K) for precis.
which require synchronous operation, high speed, low voltage, high density and wide bit configuration. These products ar.
The R1Q6A7236 is a 2,097,152-word by 36-bit and the R1Q6A7218 is a 4,194,304-word by 18-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous .
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