PS2561-1 datasheet, phototransistor equivalent, Renesas

PS2561-1 phototransistor equivalent, gaas light emitting diode and an npn silicon phototransistor.

Features and benefits

* High isolation voltage (BV = 5 000 Vr.m.s.)
* High collector to emitter voltage (VCEO = 80 V)
* High current transfer ratio (CTR = 200% TYP.)
* High-spe.

Application

* Power supply
* Telephone/FAX.
* FA/OA equipment
* Programmable logic controllers R08DS0207EJ0100 Rev..

Description

The PS2561-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor. The PS2561-1 is in a plastic DIP (Dual In-line Package) and the PS2561L-1 is lead bending type (Gull-wing) for surface mount. The.

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